b2 - 201 ? 2000 ixys all rights reserved igbt lightspeed series advanced technical information v ces = 1000 v i c25 = 30 a v ce(sat) = 3.5 v ixgh 15n100c ixgt 15n100c c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixgh) features international standard packages jedec to-268 surface and jedec to-247 ad low switching losses mos gate turn-on - drive simplicity applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies advantages high power density suitable for surface mounting easy to mount with 1 screw, (isolated mounting screw hole) 98646 (8/99) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1000 v v ge(th) i c = 250 a, v ce = v ge 2.5 5 v i ces v ce = v ces t j = 25 c 100 a v ge = 0 v t j = 125 c 3.0 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 3.5 v t j = 125 c 2.6 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1000 v v cgr t j = 25 c to 150 c; r ge = 1 m 1000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c30a i c90 t c = 90 c15a i cm t c = 25 c, 1 ms 60 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 40 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering smd devices for 10 s 260 c m d mounting torque (m3) (to-247) 1.13/10 nm/lb.in. weight to-247 ad 6 g to-268 4 g to-268 (ixgt) (tab) g e ixys reserves the right to change limits, test conditions, and dimensions.
b2 - 202 ? 2000 ixys all rights reserved remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 12 16 s pulse test, t 300 s, duty cycle 2 % c ies 1720 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 95 pf c res 35 pf q g 73 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 13 nc q gc 26 nc t d(on) 25 ns t ri 15 ns t d(off) 150 200 ns t fi 101 160 ns e off 0.85 1.40 mj t d(on) 25 ns t ri 18 ns e on 0.60 mj t d(off) 220 ns t fi 210 ns e off 1.85 mj r thjc 0.83 k/w r thck (to-247) 0.25 k/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 10 inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 10 ixgh 15n100c ixgt 15n100c to-247 ad (ixgh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 to-268aa (d 3 pak) min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
|
